This course focuses on the design of Gallium Nitride (GaN) power amplifiers (PAs) realised as monolithic microwave integrated circuits (MMICs). The course is based on a detailed discussion of four GaN PA design case studies.
The course begins with a brief introduction to the GaN transistor, including a summary of the main differences between GaN HEMT and GaAs PHEMT PAs. This includes selection of suitable devices and bias for a given specification. The course then moves on to discuss a basic approach to designing GaN power amplifiers, starting with a single transistor example. Next we discuss thermal considerations when designing with GaN. These are important in all power amplifiers, but particularly for high-power for GaN PAs.
The course then discusses some other PA designs starting with a 15 GHz PA for line-of-sight links. The next example is a 2–18 GHz non-uniform distributed PA for broadband operation. The final example is a 25 GHz X-band power amplifier for radar applications. The course concludes with a brief summary of the main points covered.
What you will learn
- GaN transistor overview
- GaN fabrication process
Device selection and bias
Load pull technique
Process design kit (PDK)
Circuit schematics and layouts
Time to Complete
Approx. 1 hr 30 mins
7 modules – 34 video lessons – 80 mins total
– video lesson
Includes 1-year unlimited individual access to all course content